| Description: |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
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| Features: |
• 71A, 80V, RDS(on) = 0.016Ω @VGS = 10 V• Low gate charge ( typical 84 nC)• Low Crss ( typical 200 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature rating
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| (Absolute) Maximum Ratings: |
| Symbol |
Parameter |
FQB90N08 / FQI90N08 |
Units |
| VDSS |
Drain-Source Voltage |
80 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
71 |
A |
|
50.2 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
284 |
A |
| VGSS |
Gate-Source Voltage |
± 25 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
1360 |
mJ |
| IAR |
Avalanche Current (Note 1) |
71 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
16 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
| PD |
Power Dissipation (TA = 25°C) * |
3.75 |
W |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
160 |
W |
|
1.06 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
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